Circuits using gate-all-around technology

ABSTRACT

In some embodiments, a semiconductor structure includes first and second GAA structures configured to form corresponding similar first and second circuits. At least one of the first or second GAA structure includes at least one GAA device. A GAA device of the at least one GAA device includes at least one nanowire and a gate region. A nanowire of the at least one nanowire has a cross-section asymmetrical with respect to a middle line of the cross-section. The cross-section has first and second end lines substantially parallel the middle line. The first end line is shorter than the second end line. The gate region wraps all around part of the nanowire. The first and second GAA structures have substantially a same of a number of GAA devices in the at least one GAA device configured to have current flow from the first end line to the second end line.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation application of U.S. Non-Provisionalapplication Ser. No. 14/681,523 filed on Apr. 8, 2015 which claimspriority to U.S. Provisional Application Ser. No. 61/981,598 filed onApr. 18, 2014, and the disclosure of which is hereby incorporated byreference in its entirety.

BACKGROUND

Gate-all-around (GAA) is a relatively new technology in semiconductorparadigm. As a result, designing circuits using such technology ischallenging.

BRIEF DESCRIPTION OF THE DRAWINGS

The details of one or more embodiments of the disclosure are set forthin the accompanying drawings and the description below. Other featuresand advantages will be apparent from the description, drawings, andclaims.

FIGS. 1A-1D are diagrams of different aspects of an exemplary transistorformed by gate-all-around technology, in accordance with someembodiments.

FIGS. 1E-1G are diagrams of further different aspects of the transistorin FIG. 1A, in accordance with some embodiments.

FIGS. 2A-2B are diagrams used to illustrate a current direction of anexemplary circuit, in accordance with some embodiments.

FIGS. 2C-2D are diagrams used to illustrate a current direction ofanother exemplary circuit, in accordance with some embodiments.

FIGS. 2E-2F are diagrams used to illustrate exemplary similar circuits,in accordance with some embodiments.

FIG. 2G is a cross-section diagram of the GAA structure in FIG. 2Breproduced to explain further aspects related to the structure.

FIGS. 3A-3B are diagrams used to illustrate an exemplary seriesconnection of two circuits, in accordance with some embodiments.

FIGS. 3C-3D are diagrams used to illustrate an exemplary seriesconnection of three circuits, in accordance with some embodiments.

FIGS. 3E-3F are diagrams used to illustrate another exemplary seriesconnection of three circuits, in accordance with some embodiments.

FIGS. 3G-3H are diagrams used to illustrate an exemplary parallelconnection of two circuits, in accordance with some embodiments.

FIGS. 4A-4D are diagrams used to illustrate directions or orientationsof layout diagrams of exemplary circuits in FIGS. 2A and 2C, inaccordance with some embodiments.

FIGS. 5A-5C are diagrams used to illustrate a number of rows ofnanowires in an array, a number of nanowires in a row, a number ofcolumn of nanowires in the array, a number of nanowires in a column, anda number of nanowires in the array, in accordance with some embodiments.

FIGS. 5D-1-5H-3 are diagrams used to illustrate GAA structures havingnanowires with different shapes, in accordance with some embodiments.

FIGS. 6A-6C are diagrams of exemplary circuits that can use inventiveconcepts of various embodiments of the present disclosure.

Like reference symbols in the various drawings indicate like elements.

DETAILED DESCRIPTION

Embodiments, or examples, illustrated in the drawings are disclosedbelow using specific language. It will nevertheless be understood thatthe embodiments and examples are not intended to be limiting. Anyalterations and modifications in the disclosed embodiments, and anyfurther applications of the principles disclosed in this document arecontemplated as would normally occur to one of ordinary skill in thepertinent art.

Some embodiments have one or a combination of the following featuresand/or advantages. In some embodiments, gate-all-around technology isused to form various circuits. For example, in some embodiments,regarding a first circuit similar to a second circuit, the first circuitand the second circuit are configured such that at least one of thefollowing features in the first circuit and in the second circuit issubstantially the same: a number of current paths flowing from a topoxide diffusion (ODT) region to a bottom oxide diffusion (ODB) region, anumber of current paths flowing from an ODB region to an ODT region, anumber of ODB regions, a layout orientation of an ODB region, a numberof ODT regions, a layout orientation of an ODT region, a number of ODBregion contact elements, a layout orientation of an ODB region contactelement, a number of ODT region contact elements, a layout orientationof an ODT region contact element, a layout orientation of and acorresponding direction of current flow through the first circuit or thesecond circuit, a number of nanowires in an array, a number of rows ofnanowires in the array, a number of nanowires in an row, a number ofcolumns of nanowires in the array, a number of nanowires in an column,and a shape of nanowires.

Gate-all-Around Structure

FIGS. 1A-D are diagrams of different aspects of an exemplary transistorbuilt by a gate-all-around (GAA) technology, in accordance with someembodiments. In some embodiments, GAA is also called vertical GAA orVGAA.

FIG. 1A is a diagram of an exemplary P-type transistor 100A. FIG. 1B isa perspective diagram of a GAA structure 100B used to form transistor100A, in accordance with some embodiments. FIG. 1C is a layout diagram100C of structure 100B, in accordance with some embodiments. FIG. 1D isa cross-section diagram 100D at line AA″ in FIG. 1C, in accordance withsome embodiments.

For illustration, in FIG. 1A, transistor 100A includes a source S10, adrain D10, and a gate G10.

In FIG. 1B, in some embodiments, a bottom OD region OD_B10 forms sourceS10, and a top OD region OD_T10 forms drain D10. In various embodiments,a bottom OD region is used to form a drain, and a top OD region is usedto form a source. For example, bottom OD region OD_B10 is used to formdrain D10, and top OD region OD_T10 is used to form source S10.

Gate region G_G10 and nanowires NA_10, NA_20, NA_30, NA_40 form gateG10. Four nanowires NA_10, NA_20, NA_30, NA_40 are used forillustration. Another number of nanowires used to form gate G10 iswithin the contemplated scope of the disclosure. Different shapes ofnanowires including those of nanowires NA_10, NA_20, NA_30, NA_40 arewithin the contemplated scope of the present disclosure. From across-section viewpoint, exemplary shapes of nanowires includerectangles, squares, triangles, tapered shapes, or combination thereof.Nanowires with vertical cross sections that have continuous taperedshapes and horizontal cross sections that have shapes of circles areexemplarily shown in FIGS. 5D-1 to 5D-3. Nanowires with vertical crosssections that have continuous tapered shapes and horizontal crosssections that have shapes of rectangles are exemplarily shown in FIGS.5E-1 to 5F-3. Nanowires with vertical cross sections that have stepwisetapered shapes and horizontal cross sections that have shapes ofrectangles are exemplarily shown in FIGS. 5G-1 to 5H-3. In someembodiments, so that a first current path from an ODB region to an ODTregion and a second current path from the same ODT region to the sameODB region have a same absolute value, nanowires are configured suchthat the nanowires are symmetrical. For example, in FIG. 1D, nanowiresNA_10 and NA_20 are each configured to be symmetrical with reference toline 110D, which is at half point of each nanowire NA_10 or NA_20. Inother embodiments, the nanowires are asymmetrical with reference to line110D in FIG. 1D such as the nanowires having the tapered shapesexemplarily illustrated in FIGS. 5D-1 to 5H-3. Nanowires are used forillustration, other type of wires used with a gate region to form a gateof transistors are within the contemplated scope of the presentdisclosure.

ODB region contact element M0_B10 is coupled with bottom OD regionOD_B10 and serves as a contact terminal for source S10. For example, ODBregion contact element M0_B10 is coupled with bottom OD region OD_B10and with a metal element in metal layer M1 (not shown), so that bottomOD region OD_B10 is electrically coupled with other components throughthe metal element in metal layer M1. Similarly, ODT region contactelement M0_T10 is coupled with top OD region OD_T10 and serves as acontact terminal for drain D10. For example, ODT region contact elementM0_T10 is coupled with top OD region OD_T10 and with a metal element inmetal layer M0, so that top OD region OD_T10 is electrically coupledwith other components through the metal element in metal layer M1.

As illustratively shown in FIG. 1B, ODB region contact element M0_B10and ODT region contact element M0_T10 are each a plane substantiallyparallel to one another. Contact elements M0_B10 and M0_T10 arranged indifferent directions are within the contemplated scope of the presentdisclosure. For example, in some embodiments, contact elements M0_B10and M0_T10 are substantially orthogonal to one another, as will beexplained with reference to FIGS. 1E, 1F, and 1G.

In some embodiments, the term “substantially parallel” or “substantiallyorthogonal” for a first direction and a second direction refers to thefirst direction within a deviation angle such as 5 degrees, 10 degrees,and 15 degrees, etc., from a reference direction. For “substantiallyparallel”, the reference direction is the second direction, and for“substantially orthogonal”, the reference direction is 90 degrees fromthe second direction. Other ways to determine the first direction being“substantially parallel” or substantially orthogonal” to the seconddirection are within the contemplated scope of the present disclosure.For example, a ratio of a deviation angle of the first direction from afirst reference direction and a deviation angle of the second directionfrom a second reference direction is greater than a percentage such as85%, 90% and 95%, etc. For “substantially parallel”, the first referencedirection is the same as the second reference direction, and for“substantially orthogonal”, the first reference direction is 90 degreesfrom the second direction. For another example, a difference between adeviation angle of the first direction from the first referencedirection and a deviation angle of the second direction from the secondreference direction is less than a percentage such as 5%, 10% and 15%,etc., of the deviation angle of the second direction from the referencedirection.

In FIG. 1D, bottom OD region OD_B10 is included in a bulk BK_B10, which,for simplicity, is not shown in FIGS. 1A-1C. In some embodiments, bulkBK_B10 is part of a substrate used to form semiconductor devices. Thenanowire NA_10 or NA_20 is vertical with respect to the substrateBK_B10. The nanowire NA_10 or NA_20 has opposite ends connected to thecorresponding top OD region OD_T10 and bottom OD region OD_B10. One endof the nanowire NA_10 or NA_20 is closer to the substrate BK_B10 whilethe other end of the nanowire NA_10 or NA_20 is further away from thesubstrate BK_B10.

FIG. 1E is a diagram of a GAA structure 100E used to form transistor100A in FIG. 1A, in accordance with some embodiments. GAA structure 100Eis different from GAA structure 100B used to form the same transistor100A. FIG. 1F is a layout diagram 100F of structure 100E, in accordancewith some embodiments. FIG. 1G is a cross-section diagram 100D at lineBB″ in FIG. 1F. FIG. 1G also includes a side-view of the ODT regioncontact element M0_T10′ viewed at line BB″ in FIG. 1F.

Compared GAA structure 100E in FIG. 1E with GAA structure 100B in FIG.1B, ODT region contact element M0_T10′ corresponds to ODT region contactelement M0_T10. Further, ODB region contact element M0_B10 and ODTregion contact element M0_T10′ in FIG. 1E are each a plane substantiallyorthogonal to one another. In contrast, ODB region contact elementM0_B10 and ODT region contact element M0_T10 in FIG. 1B are each a planesubstantially parallel to one another.

FIG. 1E illustrates one way for ODB region contact element M0_B10 andODT region contact element M0_T10′ to be substantially orthogonal to oneanother. Different ways for an ODB region contact element and an ODTregion contact element to be substantially orthogonal to one another arewithin the contemplated scope of the present disclosure.

FIGS. 1F and 1G show ODT region contact element M0_T10′ corresponding toODT region contact element M0_T10′ in FIG. 1E. Other elements in FIGS.1F and 1G are the same as in corresponding FIGS. 1C and 1D.

In the above description with reference to FIGS. 1A-1G, P-typetransistor 100A is used for illustration. N-type transistors are withinthe contemplated scope of the present disclosure. In variousembodiments, P- or N-type transistors are formed according to dopants inOD regions OD_B10 and OD_T10. Further, a particular element having aparticular shape in FIGS. 1A-1G (and the below Figs.) is also forillustration. Elements in different Figs. are not limited to aparticular shape and/or size.

In the below description, an ODB region contact element and an ODTregion contact element substantially parallel to one another is used forillustration. An ODB region contact element not substantially parallelan ODT region contact element is within the contemplated scope of thepresent disclosure. For example, in various embodiments, an ODB regioncontact element and an ODT region contact element are substantiallyorthogonal to one another, as illustrated in FIGS. 1E, 1F, and 1G, andare within the contemplated scope of the present disclosure.

Current Paths

FIGS. 2A-D are used to illustrate two different current paths of twoexemplary circuits. FIGS. 2B and 2D are two cross-section diagramsrepresenting two corresponding circuits in FIGS. 2A and 2C.

FIG. 2A is a circuit diagram of an exemplary circuit 200A, in accordancewith some embodiments. FIG. 2B is a cross-section diagram of a GAAstructure 200B used to form circuit 200A, in accordance with someembodiments.

Circuit 200A includes three transistors T1A, T2A, and T3A coupled inseries. Transistors T1A, T2A and T3A are P-type. The drain of transistorT1A is coupled with the drain of transistor T2A at node N_1A_2A. Thesource of transistor T2A is coupled with the source of transistor T3A atnode N_2A_3A.

As illustratively shown in FIG. 2A, a current I20A flows from the sourceof transistor T1A through transistors T1A, T2A, T3A to the drain oftransistor T3A.

Similar to transistor 100A in FIG. 1A, each of transistors T1A, T2A, andT3A includes a gate region that together with a plurality of nanowiresforms a gate for a corresponding transistor. For illustration, nanowiresof transistors T1A are called nanowires NA_1A, including nanowiresNA_1A1 and NA_1A2 as illustratively shown in FIG. 2B. Nanowires oftransistors T2A are called nanowires NA_2A, including nanowires NA_2A1and NA_2A2, and nanowires of transistors T3A are called nanowires NA_3A,including nanowires NA_3A1 and NA_3A2. Gate region G_1A and nanowiresNA_1A form the gate of transistor T1A. Gate region G_2A and nanowiresNA_2A form the gate of transistor TA2, and gate region G_3A andnanowires NA_3A form the gate of transistor T3A.

Similar to transistor 100A in FIG. 1A, each of transistors T1A, T2A andT3A further includes a top OD region and a bottom OD region that forms adrain and source, or a source and drain of a corresponding transistor.As the transistors T1A, T2A and T3A are coupled in series, correspondingOD regions of adjacent transistors T1A and T2A, or T2A and T3A areintegrated as one OD region ODT_1A_2A or ODB_2A_3A. An integral ODregion of a GAA structure 200B is a continuous doping region whichextends within one transistor such as bottom OD region ODB_1A oftransistor T1A or across transistors such as top OD region ODT_1A_2A oftransistors T1A and T2A.

Bottom OD region ODB_1A forms the source of transistor T1A. ODB regioncontact element M0B_1A is coupled with bottom OD region ODB_1A.Effectively, ODB region contact element M0B_1A is coupled with thesource of transistor T1A, and is used to couple the source of transistorT1A to other circuit elements.

Top OD region ODT_1A_2A forms the drain of transistor T1A and the drainof transistor T2A, and corresponds to node N_1A_2A in FIG. 2A.

Bottom OD region ODB_2A_3A forms the source of transistor T2A and thesource of transistor T3A, and corresponds to node N_2A_3A in FIG. 2A.

Top OD region ODT_3A forms the drain of transistor T3A.

ODT region contact element M0T_3A is coupled with top OD region ODT_3A.Effectively, ODT region contact element M0T_3A is coupled with the drainof transistor T3A, and is used to couple the drain of transistor T3A toother circuit elements.

In GAA structure 200B of FIG. 2B, current I20A is shown flowing throughvarious components of transistors T1A, T2A, T3A. For example, currentI20A flows through ODB region contact element M0B_1A, bottom OD regionODB_1A, nanowires NA_1A, top OD region ODT_1A_2A, nanowires NA_2A,bottom OD region ODB_2A_3A, nanowires NA_3A, top OD region ODT_3A, andODT region contact element M0T_3A.

With reference to a current flow between two OD regions, current I20Aflows through three current paths I20A1, I20A2, and I20A3. Current pathI20A1 is from bottom OD region ODB_1A to top OD region ODT_1A_2A.Current path I20A2 is from top OD region ODT_1A_2A to bottom OD regionODB_2A_3A. Current path I20A3 is from bottom OD region ODB_2A_3A to topOD region ODT_3A. Effectively, current I20A flows through two paths frombottom OD to top OD regions and one path from top OD region to bottom ODregion.

FIG. 2C is a circuit diagram of an exemplary circuit 200C, in accordancewith some embodiments. FIG. 2D is a cross-section diagram of a GAAstructure 200D used to form circuit 200C, in accordance with someembodiments.

Circuit 200C includes three transistors T1C, T2C, and T3C coupled inseries. Transistors T1C, T2C and T3C are P-type. The source oftransistor T1C is coupled with the source of transistor T2C at nodeN_1C_2C. The drain of transistor T2C is coupled with the drain oftransistor T3C at node N_2C_3C.

As illustratively shown in FIG. 2C, a current I20C flows from the sourceof transistor T3C through transistors T3C, T2C, T1C to the drain oftransistor TIC.

Similar to transistor 100A in FIG. 1A, each of transistors T1C, T2C, andT3C includes a gate region that together with a plurality of nanowiresforms a gate for a corresponding transistor. For illustration, nanowiresof transistors T1C are called nanowires NA_1C, including nanowiresNA_1C1 and NA_1C2 as illustratively shown in FIG. 2D. Nanowires oftransistors T2C are called nanowires NA_2C, including nanowires NA_2C1and NA_2C2, and nanowires of transistors T3C are called nanowires NA_3C,including nanowires NA_3C1 and NA_3C2. Gate region G_1C and nanowiresNA_1C form the gate of transistor T1C. Gate region G_2C and nanowiresNA_2C form the gate of transistor T2C, and gate region G_3C andnanowires NA_3C form the gate of transistor T3C.

Bottom OD region ODB_1C forms the drain of transistor T1C. ODB regioncontact element M0B_1C is coupled with bottom OD region ODB_1C.Effectively, contact element M0B_1C is coupled with the drain oftransistor T1C, and is used to couple the drain of transistor T1C toother circuit elements.

Top OD region ODT_1C_2C forms the source of transistor T1C and thesource of transistor T2C, and corresponds to node N_1C_2C in FIG. 2C.

Bottom OD region ODB_2C_3C forms the drain of transistor T2C and thedrain of transistor T3C, and corresponds to node N_2C_3C in FIG. 2C.

Top OD region ODT_3C forms the source of transistor T3C.

ODT region contact element M0T_3C is coupled with top OD region ODT_3C.Effectively, ODT region contact element M0T_3C is coupled with thesource of transistor T3C, and is used to couple the source of transistorT3C to other circuit elements.

In GAA structure 200D of FIG. 2D, current I20C is shown flowing throughvarious components of transistors T3C, T2C, T1C. For example, currentI20C flows through ODT region contact element M0T_3C, top OD regionODT_3C, nanowires NA_3C, bottom OD region ODB_2C_3C, nanowires NA_2C,top OD region ODT_1C_2C, nanowires NA_1C, bottom OD region ODB_1C, andODB region contact element M0B_1C.

With reference to a current flow between two OD regions, current I20Cflows through three current paths I20C1, I20C2, and I20C3. Current pathI20C1 is from top OD region ODT_3C to bottom OD region ODB_2C_3C.Current path I20C2 is from bottom OD region ODB_2C_3C to top OD regionODT_1C_2C. Current path I20C3 is from top OD region ODT_1C_2C to bottomOD region ODB_1C. Effectively, current I20C flows through two paths fromtop OD to bottom OD regions and one path from bottom OD region to top ODregion.

In various embodiments of the present disclosure, two similar circuitsare configured such that the two similar circuits have two correspondingcurrents with the same current direction. For illustration, the twosimilar circuits have corresponding cross section diagrams 200B and200D. In some embodiments, the two similar circuits are configured tohave the same two corresponding currents I20A, or the same twocorresponding currents I20C. Effectively, the two similar circuits areconfigured to be two circuits 200A, or two circuits 200B, asillustratively shown in FIGS. 2E and 2F.

FIG. 2E is a diagram of a circuit 200E, in accordance with someembodiments. Circuit 200E is symmetrical with reference to a line 210E,and includes a circuit 210EL and a circuit 210ER, which are each thesame as circuit 200A. Circuit 210EL includes transistors T1A1, T2A1,T3A1 being the same as transistors T1A, T2A, T3A, respectively. As aresult, a current I20A1 of circuit 210EL is the same as current I20A.Similarly, circuit 210ER includes transistors T1A2, T2A2, T2A3 being thesame as transistors T1A, T2A, T3A, respectively. As a result, a currentI20A2 of circuit 210ER is the same as current I20A. Consequently,circuit 200E has two similar circuits 210EL, 210ER and two correspondingsimilar currents I20A1, I20A2.

In addition, in various embodiments of the present disclosure, twosimilar circuits are configured such that the two similar circuits havethe same number of current paths from bottom OD to top OD regions, andfrom top OD to bottom OD regions. For example, because circuits 210ELand 210ER are each the same as circuit 200A, circuits 210EL and 210EReach include two current paths from bottom OD to top OD regions and onecurrent path from top OD region to bottom OD region.

FIG. 2F is a diagram of a circuit 200F, in accordance with someembodiments. Circuit 200F is symmetrical with reference to a line 210F,and includes a circuit 200FL and a circuit 200FR, which are each thesame as circuit 200C in FIG. 2C.

Circuit 210FL includes transistors T1C1, T2C1, T3C1 being the same astransistors T1C, T2C, T3C, respectively. As a result, a current I20C1 ofcircuit 210FL is the same as current I20C. Similarly, circuit 210FRincludes transistors T1C2, T2C2, T3C2 being the same as transistors T1C,T2C, T3C, respectively. As a result, a current I20C2 of circuit 210FR isthe same as current I20C. Consequently, circuit 200F has two similarcircuits 210FL, 210FR and two corresponding similar currents I20C1,I20C2.

Further, because circuits 210EL and 210ER are each the same as circuit200C, circuits 210FL and 210FR each include one current path from bottomOD to top OD regions and two current paths from top OD to bottom ODregions.

Different Configurations

FIG. 2G is cross-section diagram of GAA structure 200B reproduced forfurther illustrations.

In FIG. 2G, structure 200B includes one ODB region contact elementM0B_1A, two bottom OD regions ODB_1A, ODB_2A_3A, two top OD regionsODT_1A_2A, ODT_3A, one ODT region contact element M0T_3A, and sixnanowires NA_1A1, NA_1A2, NA_2A1, NA_2A2, NA_3A1, NA_3A2.

Bottom OD region ODB_2A_3A is used to form both sources of transistorsT2A and T3A, and is for illustration. Explained in a different way, thesources of transistors T2A and T3A are coupled together. Other ways tocouple the sources of transistors T2A and T3A are within thecontemplated scope of the present disclosure. For example, each of thesource of transistors T2A and T3A is formed by a separate bottom ODregion, such as bottom OD regions ODB_2A (not labeled) and ODB_3A (notlabeled), respectively. Further, each of bottom OD regions ODB_2A andODB_3A is coupled with a corresponding ODB region contact element, suchas M0B_2A (not label) and M0B_3A (not label), respectively. ODB regioncontact elements M0B_2A and M0B_3A are then coupled by a conductive lineto effectively couple the sources of transistors T2A and T3A together.As the bottom OD regions of transistors T2A and T3A are configureddifferently, the number of bottom OD regions and corresponding ODBregion contact elements for circuit 200A change accordingly.

Similarly, top OD region ODT_1A_2A is used to form both drains oftransistors T1A and T2A, and is for illustration. Explained in adifferent way, the drains of transistors T1A and T2A are coupledtogether. Other ways to couple the drains of transistors T1A and T2A arewithin the contemplated scope of the present disclosure. For example,each of the drain of transistors T1A and T2A is formed by a separate topOD region, such as top OD regions ODT_1A (not labeled) and ODT_2A (notlabeled), respectively. Further, each of top OD regions ODT_1A andODT_2A is coupled with a corresponding ODT region contact element, suchas M0T_1A (not label) and M0T_2A (not label), respectively. Draincontact elements M0T_1A and M0T_2A are then coupled by a conductive lineto couple the drains of transistors T1A and T2A together. As the top ODregions of transistors T1A and T2A are configured differently, thenumber of top OD regions and corresponding ODT region contact elementsfor circuit 200A change accordingly.

In various embodiments of the present disclosure, a number of ODB regioncontact elements, a number of bottom OD regions, a number of top ODregions, a number of ODT region contact elements, a number of nanowiresin an array, a number of nanowires in a row of the array, a number ofrows of the array, a number of nanowires in a column of the array, anumber of columns of the array, and combinations thereof are consideredin configuring circuits using GAA technology. For example, in someembodiments, regarding a first circuit similar to a second circuit, thefirst circuit and the second circuit are configured such that at leastone of the following feature in the first circuit and in the secondcircuit is substantially the same: a number of ODB region contactelements, a number of ODT region contact elements, a number of bottom ODregions, a number of top OD regions, a number of nanowires in an array,a number of nanowires in a row of the array, a number of rows of thearray, a number of nanowires in a column of the array, a number ofcolumns of the array. In some embodiments, the term “substantially thesame” for a first number or a first value and a second number or asecond value refers to a ratio of the first number to the second numberbeing greater than a percentage such as 85%, 90%, or 95%, etc. Otherways to determine the first number being “substantially the same” as thesecond number are within the contemplated scope of the presentdisclosure. For example, a deviation of the first number from the secondnumber is less than a percentage such as 5%, 10%, and 15%, etc., of thesecond number. For another example, the deviation of the first numberfrom the second number is less than a predetermined number determinedaccording to design specification.

In various embodiments, the number of ODB region contact elements, thenumber of ODT region contact elements, the number of bottom OD regions,the number of top OD regions, the number of nanowires in an array, thenumber of nanowires in a row of the array, the number of rows of thearray, the number of nanowires in a column of the array, and/or thenumber of columns of the array of a principal circuit varies dependingon how the GAA structures of sub-circuits of the principal circuit areconfigured to form the GAA structure of the principal circuit. FIGS.3A-H are used to illustrate various variations.

Serial Configurations

FIG. 3A is a diagram of an exemplary circuit 300A, in accordance withsome embodiments. FIG. 3B is a cross-section diagram of a GAA structure300B used to form circuit 300A, in accordance with some embodiments.

Circuit 300A includes circuits 200A3 and 200A4 coupled in series by aconductive line 310 A3 A4 at the drain of transistor T3A3 and the sourceof transistor T1A4. Circuit 200A3 and 200A4 are each the same as circuit200A in FIG. 2A. For example, circuit 200A3 includes transistors T1A3,T2A3, T3A3 corresponding to transistors T1A, T2A, T3A, respectively.Similarly, circuit 200A4 includes transistors T1A4, T2A4, T3A4corresponding to transistors T1A, T2A, T3A, respectively.

GAA structure 300B includes GAA structures 200B3 and 200B4 used to formcircuits 200A3 and 200A4, respectively. GAA structures 200B3 and 200B4are each similar to GAA structure 200A shown in FIG. 2G. As a result,GAA structure 200B3 and 200B4 each include one ODB region contactelements, two bottom OD regions, two top OD regions, one ODT regioncontact element, and six nanowires, which, for simplicity, are notlabeled. Consequently, GAA structure 300B includes two ODB regioncontact elements, four bottom OD regions, four top OD regions, two ODTregion contact elements, and twelve nanowires. In the above andsubsequent illustrations, for simplicity, the number of nanowires iscounted as seen by the corresponding cross-section diagram. The exactcount of nanowires in a corresponding GAA structure is adjustedaccordingly.

As explained with reference to FIG. 2G, when the top OD regions oftransistors T1A3 and T2A3 are configured differently, such as when eachtransistor T1A3 and T2A3 is configured to have a separate top OD region,the number of top OD regions and the number of ODT region contactelements of GAA structure 200B3 change accordingly. Similarly, when thebottom OD regions of transistors T2A3 and T3A3 are configureddifferently, such as when each transistor T2A3 and T3A3 having aseparate bottom OD region, the number of bottom OD regions and thenumber of ODB region contact elements of GAA structure 200B3 changeaccordingly. Further, when the top OD regions and/or the bottom ODregions of GAA structure 200B4 are configured differently, the number oftop OD regions, the number of ODT region contact elements, the number ofbottom OD regions, the number of ODB region contact elements of GAAstructure 200B4 change accordingly.

In various embodiments of the present disclosure, regarding two similarcircuits, when a GAA structure of the first circuit changes, the GAAstructure of the second circuit is configured to change accordingly. Forexample, if any one of the number of bottom OD regions, of top ODregions, of ODB region contact elements, and/or of ODT region contactelements of the first circuit changes, the second circuit is configuredto have the same changes.

FIG. 3C is a diagram of an exemplary circuit 300C, in accordance withsome embodiments. FIG. 3D is a cross-section diagram of a GAA structure300D used to form circuit 300C, in accordance with some embodiments.

Circuit 300C includes circuits 300C1, 300C2, 300C3 coupled in series.Circuit 300C1 includes PMOS transistors T10-1, T10-2. Circuit 300C2includes PMOS transistors T10-3, T10-4. Circuit 300C3 includes PMOStransistors T10-5, T10-6. Circuit 300C1 is coupled with circuit 300C2 bya conductive line 310_C1_C2 at the source of transistor T10-2 and thesource of transistor T10-3. Circuit 300C2 is coupled with circuit 300C3by a conductive line 310_C2_C3 at the source of transistor T10-4 and thesource of transistor T10-5.

In FIG. 3D, GAA structure 300D includes GAA structures 300D1, 300D2, and300D3 used to form circuits 300C1, 300C2, and 300C3, respectively. Eachof GAA structures 300D1, 300D2, and 300D3 includes corresponding ODBregion contact elements, bottom OD regions, top OD regions, andnanowires for corresponding transistors T10-1, T10-2, T10-3, T10-4,T10-5, and T10-6, which, for simplicity, are not labeled.

As illustratively shown in FIG. 3D, GAA structures 300D1, 300D2, and300D3 each include two ODB region contact elements, two bottom ODregions, one top OD region, and four nanowires. Consequently, GAAstructure 300D includes six ODB region contact elements, six bottom ODregions, three top OD regions, and twelve nanowires.

When the top OD regions and/or the bottom OD regions of GAA structure300D are configured differently, the number of top OD regions, thenumber of ODT region contact elements, the number of bottom OD regions,and the number of ODB region contact elements of GAA structure 300Dchange accordingly.

FIG. 3E is a diagram of an exemplary circuit 300E, in accordance withsome embodiments. FIG. 3F is a cross-section diagram of a GAA structure300F used to form circuit 300E, in accordance with some embodiments.

Circuit 300E includes circuits 300E1, 300E2, and 300E3 coupled inseries. Circuit 300E1 includes PMOS transistors T10-7, T10-8. Circuit300E2 includes PMOS transistors T10-9, T10-10. Circuit 300E3 includesPMOS transistors T10-11, T10-12. Circuit 300E1 is coupled with circuit300E2 by a conductive line 310_E1_E2 at the drain of transistor T10-8and the drain of transistor T10-9. Circuit 300E2 is coupled with circuit300E3 by a conductive line 310_E2_E3 at the drain of transistor T10-10and the drain of transistor T10-11.

In FIG. 3F, GAA structure 300F includes GAA structures 300F1, 300F2, and300F3 used to form circuits 300E1, 300E2, and 300E3, respectively. Eachof GAA structures 300E1, 300E2, and 300E3 includes corresponding ODTregion contact elements, bottom OD regions, top OD regions, andnanowires for corresponding transistors T10-7, T10-8, T10-9, T10-10,T10-11, and T10-12, which, for simplicity, are not labeled.

As illustratively shown in FIG. 3F, GAA structures 300F1, 300F2, and300F3 each include two ODT region contact elements, two top OD regions,one bottom OD region, and four nanowires. Consequently, GAA structure300F includes six ODT region contact elements, six top OD regions, threebottom OD regions, and twelve nanowires.

When the top OD regions and/or the bottom OD regions of GAA structure300F are configured differently, the number of top OD regions, thenumber of ODT region contact elements, the number of bottom OD regions,and the number of ODB region contact elements of GAA structure 300Fchange accordingly.

FIG. 3G is a diagram of an exemplary circuit 300G, in accordance withsome embodiments. FIG. 3H is a diagram of a GAA structure 300H used toform circuit 300G, in accordance with some embodiments.

Circuit 300G includes transistors T10-13, T10-14 coupled in parallel.For illustration, transistors T10-13, T10-14 are each a transistor 100Ain FIG. 1A. Transistor T10-13 is coupled with transistor T10-14 by aconductive line 310_S13_S14 at the sources of transistors T10-13 andT10-14. Transistor T10-13 is also coupled with transistor T10-14 by aconductive line 310_D13_D14 at the drains of transistors T10-13 andT10-14.

In FIG. 3H, GAA structure 300H includes GAA structures 300H1, 300H2 usedto form transistors T10-13, T10-14, respectively. Because each oftransistors T10-13 and T10-14 is a transistor 100A, each of GAAstructures 300H1 and 300H2 corresponds to a GAA structure 100D in FIG.1D. For simplicity, however, bulk BK_B10 in FIG. 1D is not shown in FIG.3H. Each of GAA structures 300H1, 300H2 includes corresponding ODBregion contact elements, bottom OD regions, top OD regions, andnanowires for corresponding transistors T10-13, T10-14, which, forsimplicity, are not labeled.

As illustratively shown in FIG. 3H, GAA structures 300H1, 300H2 eachinclude one ODT region contact element, one top OD region, one bottom ODregion, one ODB region contact element, and two nanowires. Consequently,GAA structure 300H includes two ODT region contact elements, two top ODregions, two bottom OD regions, two ODB region contact elements, andfour nanowires.

In FIG. 3G, the source of transistors T10-13 is coupled with the sourceof transistor T10-14 through conductive line 310_S13_S14 and forillustration, in FIG. 3H, two ODB region contact elements are coupledwith corresponding ODB regions. Other ways to couple the source oftransistor T10-13 and the source of transistor T10-14 are within thecontemplated scope of the present disclosure. For example, in someembodiments, the sources of transistors T10-13 and T10-14 are formed bya same bottom OD region. In such a situation, ODB region contactelements for corresponding bottom OD regions are not used.

Other ways to couple the drain of transistor T10-13 and the drain oftransistor T10-14 are within the contemplated scope of the presentdisclosure. For example, in some embodiments, the drains of transistorsT10-13 and T10-14 are formed by a same top OD region. In such asituation, ODT region contact elements for corresponding top OD regionsare not used.

When the top OD regions and/or the bottom OD regions of GAA structure300H are configured differently, the number of top OD regions, thenumber of ODT region contact elements, the number of bottom OD regions,the number of ODB region contact elements of GAA structure 300H changeaccordingly.

Layout Orientation Considerations

FIG. 4A is a layout diagram of a GAA structure 400A corresponding to thecross-section diagram in FIG. 2G and circuit 200A in FIG. 2A.

In FIG. 4A, a length L of structure 400A is in the X direction, and awidth W of structure 400A is in the Y direction. Structure 400A iscalled to be in a horizontal direction because length L of structure400A is in the X direction. ODB region contact element M0B_1A_1, bottomOD regions ODB_1A_1 and ODB_2A_3A_1, top OD regions ODT_1A_2A_1 andODT_3A_1, ODT region contact element M0T_3A_1 and gate regions G_1A_1,G_2A_1 and G_3A_1 correspond to the corresponding ODB region contactelement M0B_1A, bottom OD regions ODB_1A and ODB_2A_3A, top OD regionsODT_1A_2A and ODT_3A, ODT region contact element M0T_3A and gate regionsG_1A, G_2A and G_3A in FIG. 2G. For illustration, a current I40A1 flowsfrom ODB region contact element M0B_1A_1 to ODT region contact elementM0T_3A_1. Effectively, current I40A1 is the same as current I20A in FIG.2B. Further, a current I40A2 flows from ODT region contact elementM0T_3A_1 to ODB region contact element M0B_1A_1. Effectively, currentI40B1 is the same as current I20C in FIG. 2D.

In FIG. 4B, structure 400B is also in the X direction. ODB regioncontact element M0B_1A_2, bottom OD regions ODB_1A_2 and ODB_2A_3A_2,top OD regions ODT_1A_2A_2 and ODT_3A_2, ODT region contact elementM0T_3A_2 and gate regions G_1A_2, G_2A_2 and G_3A_2 correspond to thecorresponding ODB region contact element M0B_1A, bottom OD regionsODB_1A and ODB_2A_3A, top OD regions ODT_1A_2A and ODT_3A, ODT regioncontact element M0T_3A and gate regions G_1A, G_2A and G_3A in FIG. 2G.For illustration, a current I40A2 flows from ODT region contact elementM0T_3A_2 to ODB region contact element M0B_1A_2. Effectively, currentI40A2 is the same as current I20C in FIG. 2D. Further, a current I40B2flows from ODB region contact element M0B_1A_2 to ODT region contactelement M0T_3A_2. Effectively, current I40B2 is the same as current I20Ain FIG. 2B. For illustration, structure 400A in FIG. 4A is called to bein an X1 direction (not labeled) while structure 400B in FIG. 4B is inan X2 direction (not labeled) opposite to the X1 direction.

In each of FIGS. 4C and 4D, structure 400C or 400D is in a verticaldirection. For FIG. 4C, ODB region contact element M0B_1A_3, bottom ODregions ODB_1A_3 and ODB_2A_3A_3, top OD regions ODT_1A_2A_3 andODT_3A_3, ODT region contact element M0T_3A_3 and gate regions G_1A_3,G_2A_3 and G_3A_3 correspond to the corresponding ODB region contactelement M0B_1A, bottom OD regions ODB_1A and ODB_2A_3A, top OD regionsODT_1A_2A and ODT_3A, ODT region contact element M0T_3A and gate regionsG_1A, G_2A and G_3A in FIG. 2G. For FIG. 4D, ODB region contact elementM0B_1A_4, bottom OD regions ODB_1A_4 and ODB_2A_3A_4, top OD regionsODT_1A_2A_4 and ODT_3A_4, ODT region contact element M0T_3A_4 and gateregions G_1A_4, G_2A_4 and G_3A_4 correspond to the corresponding ODBregion contact element M0B_1A, bottom OD regions ODB_1A and ODB_2A_3A,top OD regions ODT_1A_2A and ODT_3A, ODT region contact element M0T_3Aand gate regions G_1A, G_2A and G_3A in FIG. 2G. For illustration,structure 400C in FIG. 4C called to be in an Y1 direction (not labeled)while structure 400D in FIG. 4D is in an Y2 direction (not labeled)opposite to the Y1 direction. For illustration, in FIG. 4C a currentI40A3 flows from ODB region contact element M0B_1A_3 to ODT regioncontact element M0T_3A_3. Effectively, current I40A3 is the same ascurrent I20A in FIG. 2B. Further, a current I40B3 flows from ODT regioncontact element M0T_3A_3 to ODB region contact element M0B_1A_3.Effectively, current I40B3 is the same as current I20C in FIG. 2D. InFIG. 4D, a current I40B4 flows from ODB region contact element M0B_1A_4to ODT region contact element M0T_3A_4. Effectively, current I40B4 isthe same as current I20A in FIG. 2B. Further, a current I40A4 flows fromODT region contact element M0T_3A_4 to ODB region contact elementM0B_1A_4. Effectively, current I40A4 is the same as current I20C in FIG.2D.

In various embodiments regarding a first circuit similar to a secondcircuit, regardless of the layout direction or orientation of thecorresponding GAA structures, the first circuit and the second circuitsare configured to have the same current flowing through correspondingcircuit elements of corresponding GAA structures. For illustration, thefirst circuit has a GAA structure in the X1 direction and has currentI40A1. In accordance with various embodiments of the present disclosure,the second circuit can be configured in different ways so that the firstcircuit and the second circuit perform in a substantially the samemanner. Exemplary configurations of the second circuit include 1) thesecond circuit is configured to have a GAA structure in the X1 directionand to have current I40A1 b) the second circuit is configured to have aGAA structure in the X2 direction and to have current I40B2 c) thesecond circuit is configured to have the GAA structure in the Y1direction and to have current I40A3 or d) the second circuit isconfigured to have the GAA in the Y2 direction and to have currentI40B4. In some embodiments, the term “substantially the same” for afirst layout orientation and a second layout orientation refers to thefirst layout orientation being substantially parallel or substantiallyorthogonal to the second layout orientation. In some embodiments, theterm “substantially the same” for a first current direction and a secondcurrent direction refers to an absolute value of an a current throughthe first circuit along the first current direction being substantiallythe same as an absolute value of a current through the second circuitalong the second direction.

Nano Wire Considerations

FIG. 5A is the layout diagram of GAA structure 100C in FIG. 1Creproduced for further illustrations and having labels related tonanowires NA_10, NA_20, NA_30, and NA_40. As illustratively shown,nanowires NA_10, NA_20, NA_30, NA_40 are arranged in an array of tworows and two columns.

FIG. 5B is a layout diagram of a GAA structure 500B, in accordance withsome embodiments. Compared with GAA structure 100C in FIG. 5A, GAAstructure 500B includes two additional nanowires NA_42 and NA_44.Effectively, GAA structure 500B includes an array of nanowires, havingtwo rows and three columns.

FIG. 5C is a layout diagram of a GAA structure 500C, in accordance withsome embodiments. Compared with GAA structure 100C in FIG. 5A, GAAstructure 500C includes two additional nanowires NA_46 and NA_48.Effectively, GAA structure 500C includes an array of nanowires, havingthree rows and two columns.

FIGS. 5D-1 to 5H-3 are diagrams of different shapes of nanowires betweenthe top OD region OD_T10 and bottom OD region OD_B10, in accordance withsome embodiments.

FIG. 5D-1 is a perspective diagram of nanowires NA_10_1, NA_20_1,NA_30_1 and NA_40_1 having a circular horizontal cross section and acontinuously tapered vertical cross section, in accordance with someembodiments. FIG. 5D-2 is a cross-section diagram at line CC″ in FIG.5D-1, in accordance with some embodiments. FIG. 5D-3 is a cross-sectiondiagram at line DD″ in FIG. 5D-1, in accordance with some embodiments.In FIG. 5D-1, the nanowires NA_10_1, NA_20_1, NA_30_1 and NA_40_1correspond to the nanowires NA_10, NA_20, NA_30 and NA_40 in FIG. 1B butwith different shapes. The horizontal cross section of the nanowireNA_10_1, NA_20_1, NA_30_1 or NA_40_1 at line CC″ has a circular shape,as illustratively shown in FIG. 5D-2. The vertical cross section of thenanowire NA_10_1 or NA_20_1 at line DD″ has a continuously tapered shapethat is gradually narrowed from the bottom OD region OD_B10 towards thetop OD region OD_T10, as illustratively shown in FIG. 5D-3. Therefore,in FIG. 5D-3, the vertical cross section of the nanowire NA_10_1 orNA_20_1 is asymmetrical with respect to a middle line 510_1 betweenopposite ends of the nanowire NA_10_1, or NA_20_1 connected to thecorresponding top OD region OD_T10 and bottom OD region OD_B10.

FIG. 5E-1 is a perspective diagram of nanowires NA_10_2 and NA_20_2,having a rectangular horizontal cross section and a continuously taperedvertical cross section and arranged in a row, in accordance with someembodiments. FIG. 5E-2 is a cross-section diagram at line EE″ in FIG.5E-1, in accordance with some embodiments. FIG. 5E-3 is a cross-sectiondiagram at line FF″ in FIG. 5E-1, in accordance with some embodiments.In FIG. 5E-1, the nanowires NA_10_2 and NA_20_2 correspond to thenanowires NA_10, NA_20, NA_30 and NA_40 in FIG. 1B but with differentshapes and are different in numbers. The horizontal cross section of thenanowire NA_10_2 or NA_20_2 at line EE″ has a rectangular shape, asillustratively shown in FIG. 5E-2. In addition, in FIG. 5E-2, twonanowires NA_10_2 and NA_20_2 are arranged in a row. The vertical crosssection of the nanowire NA_20_2 at line FF″ has a continuously taperedshape that is gradually narrowed from the bottom OD region OD_B10towards the top OD region OD_T10, as illustratively shown in FIG. 5E-3.Therefore, in FIG. 5E-3, the vertical cross section of the nanowireNA_20_2 is asymmetrical with respect to a middle line 510_2 betweenopposite ends of the nanowire NA_20_2 connected to the corresponding topOD region OD_T10 and bottom OD region OD_B10.

FIG. 5F-1 is a perspective diagram of nanowires NA_10_3 and NA_20_3,having a rectangular horizontal cross section and a continuously taperedvertical cross section and arranged in a column, in accordance with someembodiments. FIG. 5F-2 is a cross-section diagram at line GG″ in FIG.5E-1, in accordance with some embodiments. FIG. 5F-3 is a cross-sectiondiagram at line HH″ in FIG. 5F-1, in accordance with some embodiments.In FIG. 5F-1, the nanowires NA_10_3 and NA_20_3 correspond to thenanowires NA_10, NA_20, NA_30 and NA_40 in FIG. 1B but with differentshapes and are different in numbers. The horizontal cross section of thenanowire NA_10_3 or NA_20_3 at line EE″ has a rectangular shape, asillustratively shown in FIG. 5F-2. In addition, in FIG. 5F-2, twonanowires NA_10_3 and NA_20_3 are arranged in a column. The verticalcross section of the nanowire NA_10_3 at line HH″ has a continuouslytapered shape that is gradually narrowed from the bottom OD regionOD_B10 towards the top OD region OD_T10, as illustratively shown in FIG.5F-3. Therefore, in FIG. 5F-3, the vertical cross section of thenanowire NA_10_3 is asymmetrical with respect to a middle line 510_3between opposite ends of the nanowire NA_10_3 connected to thecorresponding top OD region OD_T10 and bottom OD region OD_B10.

FIG. 5G-1 is a perspective diagram of nanowires NA_10_4 and NA_20_4,having a rectangular horizontal cross section and a stepwise taperedvertical cross section and arranged in a row, in accordance with someembodiments. FIG. 5G-2 is a cross-section diagram at line II″ in FIG.5G-1, in accordance with some embodiments. FIG. 5G-3 is a cross-sectiondiagram at line JJ″ in FIG. 5G-1, in accordance with some embodiments.In FIG. 5G-1, the nanowires NA_10_4 and NA_20_4 correspond to thenanowires NA_10, NA_20, NA_30 and NA_40 in FIG. 1B but with differentshapes and are different in numbers. The horizontal cross section of thenanowire NA_10_4 or NA_20_4 at line II″ has a rectangular shape, asillustratively shown in FIG. 5G-2. In addition, in FIG. 5G-2, twonanowires NA_10_4 and NA_20_4 are arranged in a row. The vertical crosssection of the nanowire NA_10_3 at line JJ″ has a stepwise tapered shapethat is narrowed in steps from the bottom OD region OD_B10 towards thetop OD region OD_T10, as illustratively shown in FIG. 5G-3. Therefore,in FIG. 5G-3, the vertical cross section of the nanowire NA_20_4 isasymmetrical with respect to a middle line 510_4 between opposite endsof the nanowire NA_20_4 connected to the corresponding top OD regionOD_T10 and bottom OD region OD_B10.

FIG. 5H-1 is a perspective diagram of nanowires NA_10_5 and NA_20_5,having a rectangular horizontal cross section and a stepwise taperedvertical cross section and arranged in a row, in accordance with someembodiments. FIG. 5H-2 is a cross-section diagram at line KK″ in FIG.5H-1, in accordance with some embodiments. FIG. 5H-3 is a cross-sectiondiagram at line LL″ in FIG. 5H-1, in accordance with some embodiments.In FIG. 5H-1, the nanowires NA_10_5 and NA_20_5 correspond to thenanowires NA_10, NA_20, NA_30 and NA_40 in FIG. 1B but with differentshapes and are different in numbers. The horizontal cross section of thenanowire NA_10_5 or NA_20_5 at line KK″ has a rectangular shape, asillustratively shown in FIG. 5H-2. In addition, in FIG. 5H-2, twonanowires NA_10_5 and NA_20_5 are arranged in a column. The verticalcross section of the nanowire NA_10_5 at line KK″ has a stepwise taperedshape that is narrowed in steps from the bottom OD region OD_B10 towardsthe top OD region OD_T10, as illustratively shown in FIG. 5H-3.Therefore, in FIG. 5H-3, the vertical cross section of the nanowireNA_10_5 is asymmetrical with respect to a line 510_5 between oppositeends of the nanowire NA_10_5 connected to the corresponding top ODregion OD_T10 and bottom OD region OD_B10.

In the above FIGS. 5D-1 to 5D-3, 5E-1 to 5E-3, 5F-1 to 5F-3, 5G-1 to5G-3, and 5H-1 to 5H-3, based on the asymmetrical shapes of thenanowires, absolute values of currents in opposite directions aredifferent. For example, a first absolute current value of a firstcurrent in a first current path through the nanowires from a top ODregion to a bottom OD region is different from a second absolute currentvalue of a second current in a second current path through the nanowiresfrom the bottom region to the top region. In various embodiments of thepresent disclosure, even if the nanowires are asymmetrical, they areconsidered to be substantially symmetrical if the absolute currents inopposite directions have substantially the same absolute values. In someembodiments, whether two absolute values are substantially the same ispredetermined.

Different shapes, sizes and configurations of nanowires including thoseof nanowires illustratively shown in FIGS. 5D-1 to 5H-3 are within thecontemplated scope of the present disclosure. Different exemplary shapesof a horizontal cross section of nanowire include a rectangle withrounded corners, an ellipse, etc. Different exemplary shapes of avertical cross section of nanowire include a stepwise tapered shape withnumber of steps other than two. Different exemplary sizes of a nanowireinclude different diameters of a circular horizontal cross section ofthe nanowire and different widths or lengths of a rectangular horizontalcross section of the nanowire. Different exemplary configurations ofnanowires include different number of nanowires in an array, differentnumber of nanowires in a row, different number of nanowires in a column,different number of rows of nanowires and different number of columns ofnanowires.

In various embodiments of the present disclosure, a number of rows ofnanowires, a number of nanowires in a row, a number of columns ofnanowires, a number of nanowires in a column, a number of totalnanowires of transistors, and/or shape of the nanowires are consideredin configuring two similar circuits. For example, in some embodimentsregarding a first circuit similar to a second circuit, a number of rowsof nanowires, a number of nanowires in a row, a number of columns ofnanowires, a number of nanowires in a column, a total number ofnanowires in the first circuit, and/or shape of the nanowires are eachconfigured to be substantially the same as those of the second circuit.For another example, the first circuit and the second circuit eachinclude two rows and three columns of nanowires for a total of sixnanowires. For yet another example, the first circuit and the secondcircuit each include three rows and two columns of nanowires for a totalof six nanowires, etc. Two rows and three columns of nanowires in FIG.5B and three rows and two columns of nanowires in FIG. 5C are used forillustration. Another number of rows and/or columns is within thecontemplated scope of the present disclosure. In some embodiments, theterm “substantially the same” for a shape of a first nanowire and ashape of a second nanowire refers to values of shape-related physicalparameters of the first nanowire that affect an absolute current throughthe first nanowire being substantially the same as those of the secondnanowire. In other embodiments, the first circuit is similar to a secondcircuit when an absolute value of a current of each nanowire in thefirst circuit is substantially the same as an absolute value of acurrent of each nanowire in the second circuit regardless of the shapesof the nanowires in the first circuit and the second circuit.

Additional Similar Circuits and GAA Structure Configurations

FIG. 6A is diagrams of exemplary similar circuits 600A, in accordancewith some embodiments. For example, circuits 610AL and 610AR aresimilar. Circuits 615AL and 615AR are similar. Each of circuit 615AL,615AR is the same as corresponding circuits 610AL, 610AR, and are forillustration, but, in various embodiments, can be different fromcorresponding circuits 610AL, 610AR. For simplicity, details of circuits610AL, 610AR, 615AL, and 615AR are not labeled.

As explained above, each of circuit 610AL, 610AR may be formed usingdifferent GAA structures, resulting a situation that GAA structures ofeach circuit 610AL, 610AR, 615AL, 615AR has a distinct number of ODTregion contact elements, top OD regions, ODB region contact elements,bottom OD regions, current paths from a bottom OD region to a top ODregion, current paths from a top OD region to a bottom OD region etc.Each of circuit 610AL, 610AR, 615AL, 615AR may have a distinct nanowirestructure, e.g., having a different number of rows and columns ofnanowires in an array of nanowires, different shapes and sizes ofnanowires, etc.

In various embodiments of the present disclosure, GAA structures forcorresponding circuit 610AL and 610AR are configured to havesubstantially the same of at least one of the following features: anumber of current paths flowing from a top OD region to a bottom ODregion, a number of current paths flowing from a bottom OD region to atop OD region, a number of bottom OD regions, a bottom OD layoutorientation, a number of top OD regions, a top OD layout orientation, anumber of ODB region contact elements, a layout orientation of the ODBregion contact elements, a number of ODT region contact elements, alayout orientation of the ODT region contact elements, a number ofnanowires in an array, a number of rows of nanowires in the array, anumber of nanowires in an row, a number of columns of nanowires in thearray, a number of nanowires in an column, a shape of nanowires, etc.

In various embodiments, GAA of circuit 610AL is combined with anothercircuit, such as circuit 615AL, resulting in circuit 600AL, for example.The combined circuit 600AL has a corresponding GAA structure. Similarly,circuit 610AR is combined with a circuit, resulting in circuit 600AR,for example. In various embodiments, the GAA structure of circuit 600ARis configured such that GAA structures of circuits 600AL and 600AR havesubstantially the same of at least one of the features explained withreference to circuits 610AL and 610AR.

In various embodiments, the GAA structures of circuits 610AL and 615ALare combined in many different ways, including parallel, in series,and/or combinations thereof, for example. Further, each of a GAAstructure of a sub-circuit, such as a transistor in circuit 615AL, iscoupled in series, in parallel, and or a combination thereof with one ora combination of a GAA structure of a sub-circuit in circuit 610AL,including one or more transistors in circuit 610AL, for another example.In some embodiments, GAA structure 600AR, which is the GAA combinationresult of circuits 610AR and 615AR is configured to have substantiallythe same of at least one of the features of the GAA structure of circuit600AL.

FIG. 6B is diagrams of other exemplary similar circuits 600B, inaccordance with some embodiments. For illustration, each of circuitslabeled with an ‘L” is similar to corresponding circuits labeled with an“R.” For simplicity, details of circuits in FIG. 6B are not labeled. Invarious embodiments of the disclosure, GAA structures of circuits withlabel “L” corresponding to circuits with label “R” are configured tohave substantially the same of at least one of the features describedthroughout this document. Further, GAA structures of one or more of acircuit with label “L” may be combined. In various embodiments, GAAstructures of one or more of a corresponding circuit with label “R” arealso combined such that the resulting GAA structures of “L” circuits and“R” circuits have substantially the same of at least one of the featuresdescribed in this document.

FIG. 6C is diagrams of other exemplary similar circuits, in accordancewith some embodiments. For simplicity, details of circuits in FIG. 6Care not labeled. Similarly to circuits in FIG. 6B, in variousembodiments of the disclosure, GAA structures of circuits with label “L”corresponding to circuits with label “R” in FIG. 6C are configured tohave substantially the same of at least one of the features describedthroughout this document. Further, GAA structures of one or more of acircuit with label “L” may be combined. In various embodiments, GAAstructures of one or more of a corresponding circuit with label “R” arealso combined such that the resulting GAA structures of “L” circuits and“R” circuits have at substantially the same of at least one of thefeatures described in this document.

In some embodiments, a semiconductor structure includes a firstgate-all-around (GAA) structure and a second GAA structure. The firstGAA structure is configured to form a first circuit. The second GAAstructure is configured to form a second circuit similar to the firstcircuit. At least one of the first GAA structure or the second GAAstructure includes at least one GAA device. A GAA device of the at leastone GAA device includes a corresponding number of at least one nanowireand a gate region. A first nanowire of the at least one nanowire has afirst cross-section taken along a first direction that is asymmetricalwith respect to a middle line of the first cross-section. The middleline has a second direction substantially orthogonal to the firstdirection. The first cross-section has a first end line and a second endline substantially parallel the middle line. The first end line isshorter than the second end line. The gate region wraps all around acorresponding portion of the first nanowire of the at least onenanowire. The first GAA structure and the second GAA structure havesubstantially a same of at least one of the following features: a numberof GAA devices in the at least one GAA device configured to have currentflow from the first end line of the first cross-section to the secondend line of the first cross-section; a number of GAA devices in the atleast one GAA device configured to have current flow from the second endline of the first cross-section to the first end line of the firstcross-section; an order of directions of current flow through the firstnanowire of the at least one GAA device; a number of the at least onenanowire for a pair of corresponding GAA devices of the first GAAstructure and the second GAA structure; a number of rows of the at leastone nanowire arranged in an array for a pair of corresponding GAAdevices of the first GAA structure and the second GAA structure; anumber of nanowires in a row of the at least one nanowire arranged inthe array for a pair of corresponding GAA devices of the first GAAstructure and the second GAA structure; a number of columns of the atleast one nanowire arranged in the array for a pair of corresponding GAAdevices of the first GAA structure and the second GAA structure; anumber of nanowires in a column of the at least one nanowire arranged inthe array for a pair of corresponding GAA devices of the first GAAstructure and the second GAA structure; or a shape of the first nanowirefor a pair of corresponding GAA devices of the first GAA structure andthe second GAA structure.

In some embodiments, a semiconductor structure, includes a firstgate-all-around (GAA) and a second GAA structure. The first GAAstructure is configured to form a first circuit. The second GAAstructure is configured to form a second circuit similar to the firstcircuit. At least one of the first GAA structure or the second GAAstructure includes at least one GAA device. At least one of a first GAAdevice at one end of the at least one GAA device or a second GAA deviceat the other end of the at least one GAA device includes a correspondingnumber of at least one nanowire and a gate region. A first nanowire ofthe at least one nanowire has a first cross-section taken along a firstdirection that is asymmetrical with respect to a middle line of thefirst cross-section. The middle line has a second directionsubstantially orthogonal to the first direction. The first cross-sectionhas a first end line and a second end line substantially parallel themiddle line. The first end line is shorter than the second end line. Thegate region wraps all around a corresponding portion of the firstnanowire of the at least one nanowire. The first GAA structure and thesecond GAA structure are configured in one of the following ways: if afirst current path through the first GAA structure starts from the firstend line of the first GAA device and ends with the second end line ofthe second GAA device, a second current path through the second GAAstructure starts from the first end line of the first GAA device andends with the second end line of the second GAA device; and if the firstcurrent path starts from the second end line of the first GAA device andends with the first end line of the second GAA device, the secondcurrent path starts from the second end line of the first GAA device andends with the first end line of the second GAA device.

In some embodiments, a semiconductor structure, includes a first GAAstructure and a second GAA structure. The first GAA structure isconfigured to form a first circuit. The second GAA structure isconfigured to form a second circuit similar to the first circuit. Atleast one of the first GAA structure or the second GAA structureincludes at least one GAA device. A GAA device of the at least one GAAdevice includes a corresponding number of at least one nanowire, a gateregion, and a first oxide diffusion (OD) region and a second OD region.The gate region wraps all around a corresponding portion of a firstnanowire of the at least one nanowire. The first OD region and a secondOD region are connected to a first end and a second end of the firstnanowire of the at least one nanowire. The first end and the second endare on corresponding opposite sides of the portion of the first nanowirewrapped all around by the gate region. The first nanowire has a firstcross-sectional area and a second cross-sectional area at thecorresponding first end and second end. The first cross-sectional areabeing smaller than the second cross-sectional area. The first GAAstructure and the second GAA structure have substantially a same of atleast one of the following features: a number of GAA devices in the atleast one GAA device configured to have current flow from the first endto the second end; a number of GAA devices in the at least one GAAdevice configured to have current flow from the second end to the firstend; an order of directions of current flow through the first nanowireof the at least one GAA device; a number of the at least one nanowirefor a pair of corresponding GAA devices of the first GAA structure andthe second GAA structure; a number of rows of the at least one nanowirearranged in an array for a pair of corresponding GAA devices of thefirst GAA structure and the second GAA structure; a number of nanowiresin a row of the at least one nanowire arranged in the array for a pairof corresponding GAA devices of the first GAA structure and the secondGAA structure; a number of columns of the at least one nanowire arrangedin the array for a pair of corresponding GAA devices of the first GAAstructure and the second GAA structure; a number of nanowires in acolumn of the at least one nanowire arranged in the array for a pair ofcorresponding GAA devices of the first GAA structure and the second GAAstructure; or a shape of the first nanowire for a pair of correspondingGAA devices of the first GAA structure and the second GAA structure.

A number of embodiments have been described. It will nevertheless beunderstood that various modifications may be made without departing fromthe spirit and scope of the disclosure. For example, various transistorsbeing shown as a particular dopant type (e.g., N-type or P-type MetalOxide Semiconductor (NMOS or PMOS)) are for illustration purposes.Embodiments of the disclosure are not limited to a particular type.Selecting different dopant types for a particular transistor is withinthe scope of various embodiments. In various embodiments, a source of atransistor can be configured as a drain, and a drain can be configuredas a source.

In the illustrative Figures, the sources and/or drains of twotransistors being shown coupled in particular way are for illustration.Different ways to couple the sources of two transistors together, tocouple the drains of two transistors together, or to couple a drain of atransistor to an source of another transistors are within thecontemplated scope of the present disclosure.

The above illustrations include exemplary steps, but the steps are notnecessarily performed in the order shown. Steps may be added, replaced,changed order, and/or eliminated as appropriate, in accordance with thespirit and scope of disclosed embodiments.

What is claimed is:
 1. A semiconductor structure, comprising: a firstgate-all-around (GAA) structure configured to form a first circuit; anda second GAA structure configured to form a second circuit similar tothe first circuit; wherein at least one of the first GAA structure orthe second GAA structure comprises: at least one GAA device, a GAAdevice of the at least one GAA device comprising: a corresponding numberof at least one nanowire;  a first nanowire of the at least one nanowirehaving a first cross-section taken along a first direction that isasymmetrical with respect to a middle line of the first cross-section; the middle line having a second direction substantially orthogonal tothe first direction;  the first cross-section having a first end lineand a second end line substantially parallel the middle line; and  thefirst end line being shorter than the second end line; and a gate regionwrapping all around a corresponding portion of the first nanowire of theat least one nanowire; and the first GAA structure and the second GAAstructure have substantially a same of at least one of the followingfeatures: a number of GAA devices in the at least one GAA deviceconfigured to have current flow from the first end line of the firstcross-section to the second end line of the first cross-section; anumber of GAA devices in the at least one GAA device configured to havecurrent flow from the second end line of the first cross-section to thefirst end line of the first cross-section; an order of directions ofcurrent flow through the first nanowire of the at least one GAA device;a number of the at least one nanowire for a pair of corresponding GAAdevices of the first GAA structure and the second GAA structure; anumber of rows of the at least one nanowire arranged in an array for apair of corresponding GAA devices of the first GAA structure and thesecond GAA structure; a number of nanowires in a row of the at least onenanowire arranged in the array for a pair of corresponding GAA devicesof the first GAA structure and the second GAA structure; a number ofcolumns of the at least one nanowire arranged in the array for a pair ofcorresponding GAA devices of the first GAA structure and the second GAAstructure; a number of nanowires in a column of the at least onenanowire arranged in the array for a pair of corresponding GAA devicesof the first GAA structure and the second GAA structure; or a shape ofthe first nanowire for a pair of corresponding GAA devices of the firstGAA structure and the second GAA structure.
 2. The semiconductorstructure of claim 1, wherein the at least one GAA device furthercomprises a substrate; and for a GAA device of the at least one GAAdevice, one of the first end line or the second end line of the firstcross-section is located closer to the substrate and the other of thefirst end line or the second end line of the first cross-section islocated further away from the substrate.
 3. The semiconductor structureof claim 1, wherein the first cross-section is tapered towards the firstend line.
 4. The semiconductor structure of claim 1, wherein the firstcross-section is stepwise tapered towards the first end line.
 5. Thesemiconductor structure of claim 1, wherein the first nanowire has asecond cross-section taken along the second direction having a circularor elliptical shape.
 6. The semiconductor structure of claim 1, whereinthe first nanowire has a second cross-section taken along the seconddirection having a rectangular shape.
 7. The semiconductor structure ofclaim 1, wherein the first nanowire of a plurality of nanowires of a GAAdevice of the at least one GAA device has a second cross-section takenalong the second direction; the second cross-section has a firstdimension substantially along a third direction of a row of theplurality of nanowires and a second dimension substantially along afourth direction of a column of the plurality of nanowires; the firstdimension being longer than the second dimension; or the secondcross-section has a third dimension substantially along the fourthdirection and a fourth dimension substantially along the thirddirection; the third dimension being longer than the fourth dimension.8. The semiconductor structure of claim 1, wherein a GAA device of theat least one GAA device further comprises: a first oxide diffusion (OD)region and a second OD region connected to the corresponding first endline and second end line; the first OD region and the second OD regionbeing arranged such that overlapped areas of the first OD region and thesecond OD region have substantially the same dimension along the seconddirection as that of at least one of the first OD region or the secondOD region; or the first OD region and the second OD region beingarranged such that the overlapped areas of the first OD region and thesecond OD region have smaller dimension along the second direction thanthat of at least one of the first OD region or the second OD region. 9.The semiconductor structure of claim 1, wherein the order of directionsof current flow of at least one of the first GAA structure or the secondGAA structure is arranged along a third direction of current flow alonga length of the at least one GAA device; the order of directions ofcurrent flow at least one of the first GAA structure or the second GAAstructure is arranged along a fourth direction opposite the thirddirection; the order of directions of current flow of at least one ofthe first GAA structure or the second GAA structure is arranged along afifth direction rotated 90 degrees clockwise from the third direction;or the order of directions of current flow of at least one of the firstGAA structure or the second GAA structure is arranged along a sixthdirection rotated 90 degrees counter clockwise from the third direction.10. A semiconductor structure, comprising: a first gate-all-around (GAA)structure configured to form a first circuit; and a second GAA structureconfigured to form a second circuit similar to the first circuit;wherein at least one of the first GAA structure or the second GAAstructure comprises: at least one GAA device, at least one of a firstGAA device at one end of the at least one GAA device or a second GAAdevice at the other end of the at least one GAA device comprising: acorresponding number of at least one nanowire;  a first nanowire of theat least one nanowire having a first cross-section taken along a firstdirection that is asymmetrical with respect to a middle line of thefirst cross-section;  the middle line having a second directionsubstantially orthogonal to the first direction;  the firstcross-section having a first end line and a second end linesubstantially parallel the middle line; and  the first end line beingshorter than the second end line; and a gate region wrapping all arounda corresponding portion of the first nanowire of the at least onenanowire; and the first GAA structure and the second GAA structure areconfigured in one of the following ways: if a first current path throughthe first GAA structure starts from the first end line of the first GAAdevice and ends with the second end line of the second GAA device, asecond current path through the second GAA structure starts from thefirst end line of the first GAA device and ends with the second end lineof the second GAA device; and if the first current path starts from thesecond end line of the first GAA device and ends with the first end lineof the second GAA device, the second current path starts from the secondend line of the first GAA device and ends with the first end line of thesecond GAA device.
 11. The semiconductor structure of claim 10, whereinan order of directions of current flow along at least one of the firstcurrent path or the second current path is arranged along a thirddirection of current flow along a length of the at least one GAA device;the order of directions of current flow is arranged along a fourthdirection opposite the third direction; the order of directions ofcurrent flow is arranged along a fifth direction rotated 90 degreesclockwise from the third direction; or the order of directions ofcurrent flow is arranged along a sixth direction rotated 90 degreescounter clockwise from the third direction.
 12. The semiconductorstructure of claim 10, wherein the at least one GAA device furthercomprises a substrate; and for at least one of the first GAA device orthe second GAA device, one of the first end line or the second end lineof the first cross-section is located closer to the substrate and theother of the first end line or the second end line of the firstcross-section is located further away from the substrate.
 13. Thesemiconductor structure of claim 10, wherein the first cross-section istapered towards the first end line.
 14. The semiconductor structure ofclaim 10, wherein the first cross-section is stepwise tapered towardsthe first end line.
 15. The semiconductor structure of claim 10, whereinthe first nanowire has a second cross-section taken along the seconddirection having a circular or elliptical shape.
 16. The semiconductorstructure of claim 10, wherein the first nanowire has a secondcross-section taken along the second direction having a rectangularshape.
 17. The semiconductor structure of claim 10, wherein the firstnanowire of a plurality of nanowires of a GAA device of the first GAAdevice and the second GAA device has a second cross-section taken alongthe second direction; the second cross-section has a first dimensionsubstantially along a third direction of a row of the plurality ofnanowires and a second dimension substantially along a fourth directionof a column of the plurality of nanowires; the first dimension beinglonger than the second dimension; or the second cross-section has athird dimension substantially along the fourth direction and a fourthdimension substantially along the third direction; the third dimensionbeing longer than the fourth dimension.
 18. The semiconductor structureof claim 1, wherein a GAA device of the first GAA device and the secondGAA device further comprises: a first oxide diffusion (OD) region and asecond OD region connected to the corresponding at least one first endline and at least one second end line; the first OD region and thesecond OD region being arranged such that overlapped areas of the firstOD region and the second OD region have substantially the same dimensionalong the second direction as that of at least one of the first ODregion or the second OD region; or the first OD region and the second ODregion being arranged such that overlapped areas of the first OD regionand the second OD region have smaller dimension along the seconddirection than that of at least one of the first OD region or the secondOD region.
 19. A semiconductor structure, comprising: a firstgate-all-around (GAA) structure configured to form a first circuit; anda second GAA structure configured to form a second circuit similar tothe first circuit; wherein at least one of the first GAA structure orthe second GAA structure comprises: at least one GAA device, a GAAdevice of the at least one GAA device comprising: a corresponding numberof at least one nanowire; a gate region wrapping all around acorresponding portion of a first nanowire of the at least one nanowire;and a first oxide diffusion (OD) region and a second OD region connectedto a first end and a second end of the first nanowire of the at leastone nanowire;  the first end and the second end being on correspondingopposite sides of the portion of the first nanowire wrapped all aroundby the gate region;  the first nanowire having a first cross-sectionalarea and a second cross-sectional area at the corresponding first endand second end; and  the first cross-sectional area being smaller thanthe second cross-sectional area; and the first GAA structure and thesecond GAA structure have substantially a same of at least one of thefollowing features: a number of GAA devices in the at least one GAAdevice configured to have current flow from the first end to the secondend; a number of GAA devices in the at least one GAA device configuredto have current flow from the second end to the first end; an order ofdirections of current flow through the first nanowire of the at leastone GAA device; a number of the at least one nanowire for a pair ofcorresponding GAA devices of the first GAA structure and the second GAAstructure; a number of rows of the at least one nanowire arranged in anarray for a pair of corresponding GAA devices of the first GAA structureand the second GAA structure; a number of nanowires in a row of the atleast one nanowire arranged in the array for a pair of corresponding GAAdevices of the first GAA structure and the second GAA structure; anumber of columns of the at least one nanowire arranged in the array fora pair of corresponding GAA devices of the first GAA structure and thesecond GAA structure; a number of nanowires in a column of the at leastone nanowire arranged in the array for a pair of corresponding GAAdevices of the first GAA structure and the second GAA structure; or ashape of the first nanowire for a pair of corresponding GAA devices ofthe first GAA structure and the second GAA structure.
 20. Thesemiconductor structure of claim 19, wherein the at least one GAA devicefurther comprises a substrate; and for a GAA device of the at least oneGAA device, one of the first end or the second end is located closer tothe substrate and the other of the first end or the second end islocated further away from the substrate.